Figure 1 | Scientific Reports

Figure 1

From: Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

Figure 1

Band structures of [001]-oriented GaP nanowires with a cross section of the lateral sizes of (a,b) 11.6 × 11.6 nm2, (c,d) 23.1 × 23.1 nm2, (e,f) 23.1 × 11.6 nm2, (g,h) 34.7 × 11.6 nm2. The valence bands of GaP nanowires with square cross sections are labeled by the symmetries of their states at the Γ-point in correspondence with the irreducible representations, Γ6 and Γ7, of the D2d double point group. All the bands of GaP nanowires with rectangular cross sections are Γ5 -symmetric and doubly degenerate.

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