Figure 3 | Scientific Reports

Figure 3

From: Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

Figure 3

Lowest conduction band electron and highest valence band hole confinement energies in the [001]-oriented GaP nanowires as a function of the lateral size.

Panels (a,b) show the results for the GaP nanowires with square cross sections and panels (c,d) show the results for the GaP nanowires with rectangular cross sections. The calculated data are presented by symbols “∗” and the solid lines are the results of fittings based on Eq. (1) with the fitting parameters listed in Table 1. The insets show the zoom-in plots of the calculated confinement energies in the nanowires at large sizes.

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