Table 1 Parameters q1, q2, q3 and q4 in Eq. (1) obtained by fitting the equation to the calculated energies of the lowest conduction band and the highest valence band of the [001]-oriented GaP nanowires with a square cross section (labeled by subscript “squ”) and with a rectangular cross section (labeled by subscript “rec”) and the [111]-oriented GaP nanowires with a hexagonal cross section (labeled by subscript “hex”).

From: Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

Nanowire

Band shift

q 1

q 2

q 3

q 4

type

(eV)

(eV−1 nm−2)

(eV−1 nm−1)

(eV−1)

(eV)

[001]squ

ΔEc

2.92638

1.03589

1.50493

 

[001]squ

ΔEv

−0.45261

−0.89274

−0.09389

 

[001]rec

ΔEc

6.18442

0.44825

3.06074

0.00133

[001]rec

ΔEv

−0.50271

2.13146

−47.43079

−0.00323

[111]hex

ΔEc

1.36955

1.4002

1.19828

 

[111]hex

ΔEv

−0.33118

−2.07445

0.49631