Figure 1: Schematic of the fabrication procedure of a triangularly patterned InGaN/GaN cylindrical nanorod LED structure, an individually separated nanorod LED, and nanorod LEDs aligned between metal electrodes.

(a) Conventional InGaN/GaN MQW-based green LED structure on a flat sapphire substrate. (b) PS nanospheres in a monolayer form prepared on the Cr/SiO2/GaN substrate using a scooping transfer technique. (c) Triangularly patterned cylindrical nanorod arrays fabricated on the sapphire substrate. (d) Individually separated nanorod LEDs obtained by cutting the sample using a diamond knife. (e) Application of voltage for alignment of the individually separated nanorod LEDs between the interdigitated finger metal electrodes. (f) Nanorod LEDs aligned between the metal electrodes.