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Figure 1

From: Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

Figure 1

TEM, PL and optical Eg characterizations: (a,b) are cross-sectional HRTEM images of PA-ABD a-Si3N4 grown on Si (100) and Si (111) substrates with pre-treatment at high temperature (600 °C) and lower temperature (950 °C), respectively. (c) Room temperature PL spectra for the PA-ABD a-Si3N4/Si (100) (red), the PA-ABD a-Si3N4/Si (111) (blue), the PECVD a-SiNx/Si (111) and bare Si (100) and Si (111) substrates (black curve). (d) Optical Eg measurement of PA-ABD a-Si3N4 with red circles for experimental data, black curve for fitting) by UV-visible absorption spectra. The blue curve is previously reported data for the stoichiometric a-Si3N423. The inset is the photo of the PA-ABD a-Si3N4 membrane for the transmission measurement.

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