Figure 5
Evolution of the solid-liquid interfacial texture during polycrystalline Si growth: the top row displays the crystal facets of the Si particle illuminated according to the standard triangle in (A) and the bottom row depicts the corresponding inverse pole figures (IPFs). Shown are five representative time-steps during growth: (A) 930 s (895 °C), (B) 1476 s (885 °C), (C) 3071 s (859 °C), (D) 5254 s (822 °C) and (E) 8230 s (773 °C). The limits of the color-bar range are fixed such that multiple IPFs can be compared. From the IPFs, it can be seen that the probability of the {111} orientation relative to the parent crystal, P({111}), first increases and then decreases during growth. The boxed region in (E) consists of lamellar grain boundaries, which are characterized in Fig. 6.
