Figure 7
(A) Schematic showing the morphology of a twinned interface near a re-entrant groove. The groove has angle α and is bounded by two {111} habit planes. The generalized growth direction is denoted 〈hkl〉. (B) The growth direction of a twinned interface 〈n11〉 is plotted on the stereographic triangle, where n varies with α according to Supplementary Eq. 2 and α ∈ (70.53°, 180°]. Also plotted are the growth directions for a {111} Σ3 boundary (α = 141.06°), a {221} Σ9 boundary (α = 109.47°) and the experimental data (α = 150°, see Fig. 6). Thus, the twinned Si particle in our study grows along the 〈211〉 direction.
