Table 1

From: Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

Ts (K)

300

573

673

773

Layer

ρ(g/cc) ± 0.06, t(nm) ± 0.01, σ(nm) ± 0.03

ρ(g/cc) ± 0.06, t(nm) ± 0.01, σ(nm) ± 0.03

ρ(g/cc) ± 0.06, t(nm) ± 0.01, σ(nm) ± 0.03

ρ(g/cc) ± 0.06, t(nm) ± 0.01, σ(nm) ± 0.03

Si

3.26  60000  0.41

3.26  60000  0.37

3.26  60000  0.33

3.26  60000  0.57

CFA

6.12  53.17  0.41

6.19  52.45  0.60

6.51  52.83  0.78

6.34  52.21  1.23

Ta

15.80  1.92  0.19

14.15  1.85  0.24

15.67  1.69  0.33

14.41  1.81  0.33

Ta2O5

7.05  2.26  0.32

7.93  2.34  0.31

7.85  2.26  0.18

7.40  2.52  0.85

  1. The XRR simulated parameters i.e., ρ, t and σ for the bilayer thin films [Si/CFA(53)/Ta(2)] deposited at different Ts. Here ρ, t and σ respectively refer to the density, thickness and interface width of the individual layers.
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