Table 2

From: Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

Ts

Damping (α)

K

Δ Hinh

Meff

(K)

(G−1)

(Oe)

(kG)

300

0.00553

0.8442

0.78493

44.9

13.45

(±1.00798 × 10−4)

(±0.00595)

(±0.03938)

(±3.17732)

(±0.00303)

573

0.00139

0.94008

0.17882

67.3

13.64

(±1.32101 × 10−4)

(±0.0191)

(±0.05728)

(±4.01)

(±0.019)

673

0.00221

0.94746

0.85334

34.2

13.72

(±3.70198 × 10−4)

(±0.00461)

(±0.55447)

(±2.52)

(±0.026)

773

0.00224

0.94552

0.46399

38.5

14.03

(±1.73281 × 10−4)

(±0.00469)

(±0.28994)

(±1.24)

(±0.036)

  1. The parameter 4πMeff is obtained by fitting of H vs. f (Fig. 7) using Kittel’s equation (2).