Figure 3
From: Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure
Temperature dependence.
(a) Comparing the inverse spin Hall voltage with the magnetization of the bilayer (LSMO 30 nm/SRO 1.3 nm) measured in-plane at a constant field of 0.2 mT and subtracted by a constant contribution from the paramagnetic substrate. Below TC(SRO) the voltage generated due to ISHE strongly decreases but remains finite down to T = 100 K, where it is below the detection limit. Approaching TC(LSMO) the magnetization and therefore the spin Hall voltage decreases. (b) While obve TC(SRO) the FMR linewidth is constant, there is an increase below this temperature. The FMR amplitude still has a value of 50% of the maximum at 100 K. (c) Hysteresis loops measured for out-of-plane and in-plane direction at temperatures at TC(SRO) and 35 K below and above. The curves are corrected for the linear contribution of the strongly paramagnetic substrate. It should be noted that in the field range of ±100 mT the out-of-plane magnetization is not yet saturated.
