Figure 9
Schematic illustration of band filling effect in electronic band diagram of GaAsBi.
(a) The measured EPL equal to the intrinsic direct bandgap of GaAsBi for Ipump below a critical excitation intensity, Ic. (b) For Ipump above Ic, the “apparent” optical bandgap is widened due to a large carrier injection and recombination occurs between the Fermi levels in the CB (EFC) and VB (EFV); between states which no longer lie at their respective band edges.
