Figure 1

Interferometry detection of 2D device motion.
(a) The device model and illustration of 1st-order reflections. (b) Reflectance R vs. vacuum gap depth d2 for 1–3L MoS2 devices. Dashed line indicates the example geometry (d2 = 250 nm) and the slopes of the R-d2 curves gives the responsivity ℜ (dotted lines). (c) Magnitude of motion-to-reflectance responsivity for 1L, 2L and 3L MoS2 devices. Dotted horizontal lines show the values of |ℜ| at d2 = 250 nm (vertical dashed line).