Figure 6

Interferometry at 532 nm (a–c) and 405 nm (d–f) wavelengths. (a,d) Reflectance (top) and responsivity (bottom) as functions of vacuum gap depth (d2) for 1L to 50L MoS2 devices. Curves for selected thicknesses are color highlighted (as indicated in legends). (b,e) 2D color plots of reflectance R and (c,f) magnitude of responsivity |ℜ| as functions of device thickness (d1) and vacuum gap depth (d2) for 1L to 200L MoS2 devices (in R maps: dark purple: low R; dark red: high R; in |ℜ| maps: dark purple: no responsivity; dark red: high |ℜ|). Locations with d1 = mλ/(4nMoS2) and d2 = nλ/2 are shown as gridlines.