Table 1 Optimal Geometry for 1L, 2L and 3L Graphene, h-BN and MoS2 Devices.
Thickness | 1L | 2L | 3L | # of Layers Free to Vary for Highest Possible Responsivity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|
Material | Vacuum Gap d2 (nm) | Optimal |ℜ| (%/nm) | Vacuum Gap d2 (nm) | Optimal |ℜ| (%/nm) | Vacuum Gap d2 (nm) | Optimal |ℜ| (%/nm) | Number of Layers | Crystal Thickness d1 (nm) | Vacuum Gap d2 (nm) | Optimal |ℜ| (%/nm) |
Graphene | 383 | 0.0508 | 381 | 0.0973 | 378 | 0.140 | 48 | 16.08 | 337 | 0.640 |
h-BN | 351 | 0.00503 | 351 | 0.0101 | 350 | 0.0151 | 240 | 79.92 | 297 | 0.714 |
MoS 2 | 353 | 0.186 | 350 | 0.360 | 347 | 0.515 | 12 | 8.4 | 329 | 1.016 |
