Figure 1
From: Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

PL spectra of GaAsSb alloy samples measured at 10 K; The inset shows the PL spectrum of GaAs substrate at 10 K.
From: Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy
PL spectra of GaAsSb alloy samples measured at 10 K; The inset shows the PL spectrum of GaAs substrate at 10 K.