Figure 2
From: Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Temperature dependent PL spectra of sample 1–3 during the temperature range from 10 to 150 K.
From: Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Temperature dependent PL spectra of sample 1–3 during the temperature range from 10 to 150 K.