Table 1 The growth condition of the GaAsSb alloy samples.
From: Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy
Sample | Growth Temperature | As/Sb Beam Ratio | Sb Component |
---|---|---|---|
1 | 600 °C | 28:1 | 6% |
2 | 16:1 | 8% | |
3 | 7:1 | 9% |
From: Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy
Sample | Growth Temperature | As/Sb Beam Ratio | Sb Component |
---|---|---|---|
1 | 600 °C | 28:1 | 6% |
2 | 16:1 | 8% | |
3 | 7:1 | 9% |