Figure 1
From: InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
(a) The cross-sectional SEM micrograph of the DBR-LED structure was observed. The OM image of the DBR-LED is inserted with a blue light image. (b) 70 nm-thick NP-GaN layer and 46 nm-thick GaN layer were observed in the stacked DBR structure.
