Figure 1
PCM device and characteristics.
(a) Cross section TEM of a PCM device, indicating the structure with confined BE. (b) Measured I-V curve for the 2 states obtained by conventional phase change, namely the set state (crystalline phase) and the PR state (amorphous phase). (c) Measured I-V curves for the PCM device under bipolar switching: A first positive voltage sweep is applied to an initially PR (amorphous) state to induce crystallization of GST within the cell, then a negative sweep is applied inducing bipolar reset. (d) Measured I-V curves for bipolar switching following the initialization of (c) and displaying similar bipolar set and bipolar reset operations of the device for 10 cycles.
