Figure 2
From: Point contact resistive switching memory based on self-formed interface of Al/ITO
(a) I-V characteristics of the Ta/ITO sample. Inset: ln(I)-V curve (top left), the schematic structure for the electrical measurement of Ta/ITO structure (bottom right). The Ta electrode is grounded and the bias voltage is applied on the ITO electrode. (b) XPS survey scan of the Ta/ITO interface. (c) Ta 4f XPS peaks.
