Figure 5
From: Point contact resistive switching memory based on self-formed interface of Al/ITO
(a) Electrical properties of the Al/ITO sample after vacuum annealed. Inset: the ln(I)-V curve. The Al electrode is grounded and the bias voltage is applied on the ITO electrode. The red and green ovals represent the SET and RESET processes, respectively. The arrows indicate the switching tendency. (b) Endurance performance of the annealed sample at 25 and 95 °C. (c) retention characteristics of the annealed sample at 25 and 95 °C. (d) Distributions of SET and RESET threshold voltage. (e) Cross-sectional TEM images of the interface of annealed Al/ITO.
