Figure 2
From: Valley-engineered ultra-thin silicon for high-performance junctionless transistors
(a) High-resolution TEM image of a 22 nm thick top silicon. (b) FFT image (c) A mask was applied to the FFT image to utilize the information. (d) A reconstructed inverse FFT image was used to analyze the lattice distance in the silicon. (e) Intensity of lattice distance from the inverse FFT image. (f) Extracted lattice distance versus silicon thickness. The calculated tensile strain along the transport direction is plotted together against the silicon thickness.
