Figure 4
From: Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication
Multiple shapes fabricated by SDM.
(a) A circle ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (b) The gap width of the circle ring was reduced to 4.3 nm after the ion irradiation. The inset shows the cross section of the circle ring, revealing a bottom linewidth down to 2.7 nm. (c) A nanohole array with a diameter of ~120 nm as the initial pattern prepared by the focused Ga ion beam. (d) The diameter of the nanohole array shrunk to 7 nm after the ion irradiation. (e) A square ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (f) The gap width of the square ring was reduced to 4.1 nm after the ion irradiation.
