Figure 5
From: Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication
SEM images of a large area of uniform ~5 nm patterns fabricated by the SDM method.
(a) A large exposure area of ~3570 μm2 with the ion irradiation. (b) A magnified image from (a), revealing a uniform line array over a large area. (c) A magnified image from (b), revealing a narrow gap of only 5.1 nm in width.
