Figure 2 | Scientific Reports

Figure 2

From: Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

Figure 2

(a–c) Raman spectra of as-sputtered and annealed MoS2 films; (d) Raman spectra of MoS2 films annealed at different times of 30 min, 1 hour, 2 hours and 3 hours; (e) Magnified view of Raman spectra of figure (d); (f–h) Raman mapping for 1-min sample (30 μm × 30 μm). (f) E2g1 mode appears at 384.82–384.92 cm−1 (with a standard deviation 0.048 cm−1) (g) A1g mode appears at 405.19–405.29 cm−1 (with a standard deviation 0.049 cm−1) (h) The measured frequencies difference (∆k) is in the range of 20.27–20.47 cm−1 (with a standard deviation 0.066 cm−1).

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