Figure 3
From: Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
(a) The relative energies ΔE0 (eV/f.u., with respect to the lowest-energy stacking order AA’). (b) The binding energy Eb (eV/f.u.) of bilayer MoSe2-WSe2 lateral heterostructures. (c) The optimized interlayer distance d (Å). (d) Band gaps of bilayer MoSe2-WSe2 lateral heterostructures in the different stacking orders.
