Figure 4
From: Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
Band structures (a–e) and charge transfer (f–j) of AA, AA’, A’B, AB and AB’ stacked bilayer MoSe2-WSe2 lateral heterostructures in the case of B2. The isosurface value for all of the cases is 2 × 10−4 e/Å3. The red isosurface indicates an electron gain, while the green one represents an electron loss.
