Figure 5: Theoretical k dependence of the decay length and calculated band structure with on-site Coulomb repulsion in the tight-binding model.
From: Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
(a) Band structures calculated using the tight-binding model with on-site Coulomb repulsion terms only at the zigzag edges, showing metallic edge states. When the calculation was performed with on-site Coulomb repulsion terms at all carbon sites, a semiconducting edge state was obtained. (b) Momentum-dependent decay length based on the tight-binding calculation. Compared with the experimental value, the effective k value of the current tip is 0.81kΓX. The inset shows the decay length dependence of the k value17. The open circles represent edge states.
