Figure 2
From: Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction
Characterization of a heterojunction based on monolayer WS2 and MoS2.
(a) AFM image and height profile of a triangle-shaped grain with a monolayer WS2/MoS2 lateral heterostructure grown on graphite. The height profile was obtained along the dotted line. (b–d) PL intensity maps from 1.92 to 1.99 eV for WS2 and 1.80 to 1.88 eV for MoS2 and a combined PL intensity map of (b,c). Cyan and red correspond to the intensities of the WS2 and MoS2 PL peaks, respectively. (e,f) Current images of the grain and the expanded area indicated by the white box in (e). (g) Current profile along the dotted line in (f).
