Table 1 Parameters employed to solve the theoretical laser equations.

33 mA

threshold current

63 mA

current bias

2.15 · 10⁻¹⁰ cm³

volume of the active region

16 ps

active region round-trip time

−1.6 · 10⁻¹⁹C

carrier elementary charge

1.4 ns

carrier lifetime

τ_sI_th/qV_c

threshold carrier density

0.07

diode left facet reflectivity

0.8

grating maximum reflectivity

π · 50 · 10⁹rad · s⁻¹

grating spectral linewidth

2πf_L

grating central frequency

rg/(1 + j(ω − ω_G)/Δω)

grating approximated reflectivity

1.0 cm

grating distance from diode left facet

2L/c₀

grating to left diode facet round-trip time

0.3

Si₃N membrane reflectivity

20 cm

Si₃N membrane distance from diode left facet

2L_ext/c₀

Si₃N membrane to diode left facet round-trip time

3 · 10⁸m · s⁻¹

speed of light in vacuum