Table 1 Parameter values employed in the DoS-model.
From: Impact of defect occupation on conduction in amorphous Ge2Sb2Te5
DoS model | |
Densities | ND,s = ND,d = 5 × 1021 cm−3eV−1 |
Nc(300 K) = Nv(300 K) = 3.9 × 1021 cm−3 | |
Capture rates | Cp,s = 2.5 × 10−12 cm3s−1, Cn,s = 5 × 10−11 cm3s−1 |
Cp,d = 3 × 10−11 cm3s−1, Cn,d = 1.5 × 10−12 cm3s−1 | |
Energies | ED,d(0 K) = 0.39 eV, ED,s(0 K) = 0.25 eV |
ED(T)/EG(T) = ED(0 K)/EG(0 K), other cases, see suppl. | |
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