Table 1 Parameter values employed in the DoS-model.

From: Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

DoS model

 Densities

ND,s = ND,d = 5 × 1021 cm−3eV−1

Nc(300 K) = Nv(300 K) = 3.9 × 1021 cm−3

 Capture rates

Cp,s = 2.5 × 10−12 cm3s−1, Cn,s = 5 × 10−11 cm3s−1

Cp,d = 3 × 10−11 cm3s−1, Cn,d = 1.5 × 10−12 cm3s−1

 Energies

ED,d(0 K) = 0.39 eV, ED,s(0 K) = 0.25 eV

ED(T)/EG(T) = ED(0 K)/EG(0 K), other cases, see suppl.

, EG,0 = 0.953 eV, α = 0.555 meVK−1, β = 65 K

  1. The parametrization of the optical band-gap for GST is taken from ref. 41. All other DoS-parameters were taken from ref. 23.