Figure 1
Epitaxial growth of flat complex oxide heterostructures on silicon.
(a) XRD θ–2θ scan around symmetrical reflections of the tCFO = 70 nm sample. (b) Zoom of the symmetrical θ–2θ scan around the CFO(004), BTO(002) and LNO(002) reflections of tCFO = 70 and 35 nm samples and the sample with no CFO layer (tCFO = 0 nm). For clarity the scans are shifted vertically. The vertical dashed line marks the position of the BTO(002) reflection in bulk BTO. (c) XRD ϕ-scans around asymmetrical reflections of the tCFO = 70 nm sample. A sketch of the heterostructure is at the right. Topographic AFM images of tCFO = 0 (d), 35 (e) and 70 nm (f) samples. The scale bar is 1 μm and the rms roughness of each sample is indicated at the right of the corresponding image.
