Figure 2
From: Physical Realization of a Supervised Learning System Built with Organic Memristive Synapses
(a) Schematic representation of the metal/organic/metal memristor and the organic-composing active layer. (b) SEM image of the actual devices. Scale bar in the left and right images represent 20 μm and 200 nm, respectively. (c) Electrical characteristics of the memristor under voltage sweeps. (d) Top panel: Conductivity (G) evolution of the device under pulses with increasing amplitude. Gray traces show all transitions and one characteristic transition (black) is highlighted. Bottom panel: amplitude of each pulse. Inset: representation of the applied waveform. (e) Top panel: Statistics of conductivity change (ΔG) versus pulse amplitudes. The gray boxes show the 25–75% probability and the whiskers are 10–90%; bottom panel: SET/RESET event (ΔG/G0 > 40%) probability with respect to the pulse amplitude.
