Figure 2
From: Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications
(a–c) are SEM images of porous alumina templates with 436 ± 16 nm, 162 ± 11 nm and 31 ± 4 nm diameters, respectively, that were used as substrates in the sputtering process. (d–f) show SEM images of the sputtered Si0.8Ge0.2 nano-meshed films grown on the previous templates, which have replicated the porous alumina. (g–i) are SEM images of the lateral of these samples, where the Si0.8Ge0.2 films and the alumina matrix can be observed.
