Figure 7
Mobility vs. carrier concentration. Variation in the carrier concentration of the superlattices with SiOx layer thickness.
(■) a-IGZO/SiOx superlattices on glass substrate, (□) a-IGZO/SiOx superlattices on Al2O3, (
) ZnO:Al/SiOx superlattices, (
) Values for bulk a-IGZO from Akihiro Takagi et al.39. The behaviour of the films can be categorised into three regions. Region A consists of the a-IGZO superlattices with SiOx layers of 2–4 nm thickness. Region B consists of the a-IGZO superlattices with SiOx layers of 4–10 nm thickness. Region C consists of the a-ZnO:Al superlattices. Variation of the mobility within these regions is a result of the modulation of the SiOx thickness over the specified range.
