Figure 2
From: Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors
Optical microscopy images of in-situ spherulite growth in a spun-cast TES-ADT film (12 hours of mixing) during exposure to DCE vapor for 40 s, 1 min, 1 min 30 s and 4 mins.
