Figure 3
Normal state electrical properties of ferecrystals (PbSe)1.14(NbSe2)n.
(a) Temperature-dependent in-plane electrical resistance normalized to the resistance at T = 290 K. The error bars for the resistances of the ferecrystals have been determined by the difference in resistance between the measurements of two samples and are shown exemplarily for one temperature. The data reported for NbSe2 bi-trilayers12 are from two-terminal measurements. The data for the ferecrystal thin films and for the bulk MLCs single crystals reported by Nader et al.20 and Auriel et al. 199323, for an NbSe2 monolayer reported by Xi et al.1 and for bulk NbSe2 reported by Iwaya et al.47 are from four-terminal measurements. Black solid lines are Bloch-Grüneisen fits for ferecrystals and MLCs. The charge density wave transition temperature of bulk NbSe2 (TCDW) is indicated. (b) In-plane residual resistivity ρres in dependence on n for (PbSe)1.14(NbSe2)n ferecrystal thin films and MLC bulk reported by Nader et al.20 and Auriel et al. 199323, for NbSe2 bilayers reported by Tsen et al.13, for 12 layers of NbSe2 reported by El-Bana et al.48 and for bulk NbSe2 reported by Naik et al.8 and Lee et al.30. The labels A and B indicate a clover-leaf (A) and a cross-shaped sample (B), respectively. (c) Residual resistance ratio RRR of (PbSe)1.14(NbSe2)n ferecrystals and data reported for bulk MLC single crystals (PbSe)1+x(NbSe2)n reported by Auriel et al. 199323 and Nader et al.20. The data reported by El-Bana et al.48 and Tsen et al.13 are data from exfoliated flakes. The data reported by Lee et al.30 and Naik et al.8 are data from bulk NbSe2 single crystals.
