Figure 10

J-V curves of devices prepared with SFP before (a) and after (b) compression in normal devise structure of FTO/TiO2/SFP/spiro-OMeTAD/Au for the scan directions of forward bias to short circuit (FB-SC) and short circuit to forward bias (SC-FB) and effect of different post annealing times of 0, 10 and 20 minutes at 130 °C on device hysteresis (c).