Figure 5

J-V curves measured at AM1.5G solar illumination for devices prepared with normal architecture of FTO/TiO2/SFP/spiro-OMeTAD/Au (a) and inverted architecture of FTO/CuI/SFP/PCBM/Al (b); the photovoltage decay analysis for device structure of FTO/TiO2/SFP/spiro-OMeTAD/Au (c); schematic of charge transferring and recombination states in SFP based solar cells (d) and Nyquist plots of EIS measurements under dark condition with a 0.8 V bias voltage (e).