Figure 4
From: Large Area Fabrication of Semiconducting Phosphorene by Langmuir-Blodgett Assembly
Field effect transistor with LB assembled phosphorene as a conducting channel material.
(a) Digital image of the device. (b) Optical image of channel. (c) Magnified optical image showing a connecting nanosheet between source and drain. (d) AFM of the device. Inset: Height profile of nanosheet. (e) Variation of drain current IDS with gate voltage VGS (left y-axis is the linear scale and right y-axis is the logarithmic scale). (f) Variation of drain current IDS with the drain voltage VDS for different gate voltages VGS.
