Figure 2: The electrical performances of HVTFTs.
From: MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
(a) Transfer characteristics of ZnO, MZO and m-MZO HVTFTs with VDS = 10V. (b) The shift of threshold voltage of HVTFTs at different temperatures. (detail definition of the shifts of threshold voltage can be found in the Supplementary Information.) (c) The extracted activation energy of drain current as a function of gate bias in HVTFTs.
