Figure 3: Material characterization near the interfaces.
From: MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
TEM images of the interfaces between the channel layer and the SiO2 dielectric layer (a) without a transition layer (for MZO HVTFT) and (b) with a modulation doped transition layer (for m-MZO HVTFT). The inset of Fig. 3(a) features the gray dots found in the SiO2 layer in the MZO sample. EDS spectra of Zn, Mg and Si elements at the different locations (marked in the TEM images) across the channel – gate dielectric interface for (c) MZO and (d) m-MZO samples. Depth profiles of atomic percentage of Si, Zn, and Mg from XPS measurements of (e) MZO and (f) m-MZO samples along the scan lines shown in the TEM pictures. The oxygen profile is not included.
