Figure 5: The simulation results of electrical field distribution in HVTFTs.
From: MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
Schematic diagrams of different interface designs and layer structures of (a) MZO and (b) m-MZO HVTFT, respectively. The SILVACO simulation results on two-dimensional distributions of the critical electrical field in the nominal (L = 10μm) channels of (c) MZO HVTFT and (d) m-MZO HVTFT, respectively. (e) A comparison of the electrical field of MZO HVTFT and m-MZO HVTFT. The cutline of the electrical field is near the interface of channel/gate dielectric and above the gate edge where the maximum electrical field locates.
