Figure 2: The ME voltage coefficient αE of a memory device made of the PMN-PT/Terfenol-D multiferroic heterostructure. | Scientific Reports

Figure 2: The ME voltage coefficient αE of a memory device made of the PMN-PT/Terfenol-D multiferroic heterostructure.

From: A multilevel nonvolatile magnetoelectric memory

Figure 2

(a) The structure of the device and the measurement configuration. The electric field is applied vertically along [110] of PMN-PT and both the dc bias and ac magnetic fields are applied in plane along [−110] of PMN-PT. (b) αE as a function of dc bias magnetic field with +Ps and –Ps, respectively. The state of αE depends on the relative orientation between M and P, with the maximums located around ±1 kOe where the magnetostriction coefficient of Terfenol-D is largest.

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