Figure 3 | Scientific Reports

Figure 3

From: Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

Figure 3

(a–c) XPS spectra of h-BN monolayer transferred on SiO2 substrate, showing C1s, B1s, and N1s core levels, respectively. The peaks of (a–c) were fitted with Gaussian curves (red peaks). (d) UV−Visible absorption spectrum of h-BN film on quartz substrate (inset) measured at room temperature, and (e) Tauc’s plot of (αE)2 versus energy (E) for determing the optical bandgap (OBG) of h-BN film, which is about 6.0 eV. (f) I-V curve of the monolayer h-BN device on n-Si substrate, indicating the highly insulating nature below 5.0 V. The inset shows the I-V curve with two-probe measurement on bare n-Si surface.

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