Figure 1
(a) Schematic and SEM images of a Pt nanowire fabricated on a SiO2/Si substrate. After the formation of multiple nanowires, the nanogaps were opened one by one. (b) Nanogap formation sequence. (c) SEM image of a Pt polycrystalline nanowire with nanogaps. Excess current in the Ar/H2 (4% hydrogen) ambient gas caused the formation of polycrystalline Pt in the nanowire and then opened a nanogap at a facet edge of the polycrystalline Pt. Typically, three-step current application will reproducibly open nanoscale gaps.
