Figure 3 | Scientific Reports

Figure 3

From: Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Figure 3

(a) Resistance switching in polycrystalline Pt nanogaps at the highest possible temperature of 873 K. (b) Temperature dependence of Pt NGS. (c) Resistance switching in Au nanogaps at the highest possible temperature of 573 K. (d) Temperature dependence of Au NGS. (e) Temperature dependences of the ON/OFF ratios for polycrystalline Pt nanogaps and Au nanogaps.

Back to article page