Figure 4 | Scientific Reports

Figure 4

From: Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Figure 4

(a) Temperature-dependent transition from the HRS to the LRS detected under a continuous bias voltage of 3 V. The transition delay after the application of the bias voltage depends on the temperature. (b) Temperature dependence of the transition delay time and an activation energy analysis based on Arrhenius activation. Inset: Arrhenius plot of 1/tc as a function of the inverse temperature. In this analysis, it is assumed that the formation and migration of the needle tip element are thermally assisted at high temperatures.

Back to article page