Figure 5
From: The role of ion transport phenomena in memristive double barrier devices

(a) The in x and y directions averaged Coulomb potential due to the charged defects, plotted as a function of z is shown for different time steps. The transport of negative charged point defects within the field of a positive applied voltage at the Au electrode leads to a charge separation and therefore to a positive Coulomb-potential within the device, and thus to a negative Coulomb-potential at the Schottky contact (z = 0). The corresponding change of the Schottky barrier height due to the negative Coulomb potential plotted as a function of the applied voltage is shown in (b).