Table 1 Parameters for the simulation.
From: The role of ion transport phenomena in memristive double barrier devices
Physical quantity | Value |
|---|---|
Temperature | 300 K |
Phonon frequency | 1.0 × 1012 Hz |
Lattice constant (x, y) (NbxOy) | 3.3 × 10−10 m |
Lattice constant (z) (NbxOy) | 2.5 × 10−10 m |
Relative permittivity (Al2O3) | 9 |
Relative permittivity (NbxOy) | 42 |
Conductivity (NbxOy) | 2 × 10−4 |
Eij for ion diffusion | 0.68 eV |
Eij for desorption | 0.25 eV |
Eij for adsorption | 0.71 eV |
Defect density n | 5 × 1020 |
Tunnel barrier height Φ0 | 3.1 eV |
